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 BDC01D One Watt Amplifier Transistor
NPN Silicon
Features http://onsemi.com
COLLECTOR 2 3 BASE 1 EMITTER
* Pb-Free Package is Available*
MAXIMUM RATINGS
Rating Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current - Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 100 100 5.0 0.5 1.0 8.0 2.5 20 -55 to +150 Unit Vdc Vdc Vdc Adc W mW/C W mW/C C 1 2 3
TO-92 (TO-226) CASE 29-10 STYLE 1
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Symbol RqJA RqJC Max 125 50 Unit C/W C/W
MARKING DIAGRAM
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
BDC 01D AYWW G G
BDC01D = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location)
ORDERING INFORMATION
Device BDC01DRL1 BDC01DRL1G *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
(c) Semiconductor Components Industries, LLC, 2006
Package TO-92 TO-92 (Pb-Free)
Shipping 2000 / Tape & Reel 5000 / Tape & Reel
1
February, 2006 - Rev. 2
Publication Order Number: BDC01D/D
BDC01D
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector -Emitter Voltage (IC = 10 mA, IB = 0) Collector Cutoff Current (VCB = 100 V, IE = 0) Emitter Cutoff Current (IC = 0, VEB = 5.0 V) ON CHARACTERISTICS DC Current Gain (IC = 100 mA, VCE = 1.0 V) (IC = 500 mA, VCE = 2.0 V) Collector -Emitter Saturation Voltage (Note 1) (IC = 1000 mA, IB = 100 mA) Collector -Emitter On Voltage (Note 1) (IC = 1000 mA, VCE = 1.0 V) DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product (IC = 200 mA, VCE = 5.0 V, f = 20 MHz) Output Capacitance (VCB = 10 V, IE = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width v 300 ms; Duty Cycle 2.0%. fT Cob 50 - - 30 MHz pF hFE 40 25 VCE(sat) VBE(on) - - 400 - 0.7 1.2 Vdc Vdc - V(BR)CEO ICBO IEBO 100 - - - 0.1 100 Vdc mAdc nAdc Symbol Min Max Unit
400 TJ = 125C
hFE , DC CURRENT GAIN
VCE = 1.0 V
200 25C -55C 80 60 40
100
0.5
0.7
1.0
2.0
3.0
5.0
7.0 10 20 30 IC, COLLECTOR CURRENT (mA)
50
70
100
200
300
500
Figure 1. DC Current Gain
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2
BDC01D
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS 1.0 TJ = 25C 0.8 IC = 10 mA 50 mA 100 mA 250 mA 500 mA V, VOLTAGE (VOLTS) 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 1.0 TJ = 25C
0.6
0.4
0.4
0.2 0 0.05
0.2 VCE(sat) @ IC/IB = 10 0.1 0.2 1.0 0.5 2.0 5.0 IB, BASE CURRENT (mA) 10 20 50 0 0.5 1.0 2.0 5.0 10 20 50 100 IC, COLLECTOR CURRENT (mA) 200 500
Figure 2. Collector Saturation Region
Figure 3. "On" Voltages
VB, TEMPERATURE COEFFICIENT (mV/ C)
-0.8 -1.2 C, CAPACITANCE (pF)
80 60 40 Cibo TJ = 25C
-1.6 qVB for VBE
20
-2.0
-2.4 -2.8 0.5
10 8.0 6.0 Cobo 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100
1.0
2.0
5.0 20 50 10 100 IC, COLLECTOR CURRENT (mA)
200
500
4.0 0.1
Figure 4. Base-Emitter Temperature Coefficient
Figure 5. Capacitance
BANDWIDTH PRODUCT (MHz)
300 200 IC, COLLECTOR CURRENT (mA) VCE = 2.0 V TJ = 25C DUTY CYCLE 10% 2k 1k 500 200 100 50 20 30 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 10 1.0 TA = 25C TC = 25C 1.0 s 1.0 ms 100 ms
100 70 50
dc dc CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT MPSW05 MPSW06 2.0 5.0 10 20 60 80 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
f T, CURRENT-GAIN
Figure 6. Current-Gain -- Bandwidth Product
Figure 7. Active Region -- Safe Operating Area
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3
BDC01D
PACKAGE DIMENSIONS
TO-92 (TO-226) CASE 29-10 ISSUE AL
A
R P F L
B
SEATING PLANE
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSIONS D AND J APPLY BETWEEN L AND K MIMIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D F G H J K L N P R INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.021 0.016 0.019 0.045 0.055 0.095 0.105 0.018 0.024 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.135 --- MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.457 0.533 0.407 0.482 1.15 1.39 2.42 2.66 0.46 0.61 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 3.43 ---
K
XX G H R
123
D J SECTION X-X
NC
N
STYLE 14: PIN 1. EMITTER 2. COLLECTOR 3. BASE
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative.
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4
BDC01D/D


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